
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
( Typical Application Circuit optimized for the Standard RF Band (see Table 1) . V CC = 5.0V, f RF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P RF = -5dBm, P LO = 0dBm, T C = +25°C, unless otherwise noted.)
12
11
10
9
NOISE FIGURE vs. RF FREQUENCY
T C = +85°C
12
11
10
9
NOISE FIGURE vs. RF FREQUENCY
12
11
10
9
NOISE FIGURE vs. RF FREQUENCY
8
T C = +25°C
8
P LO = -6dBm, -3dBm, 0dBm, +3dBm
8
V CC = 4.75V, 5.0V, 5.25V
T C = -40°C
7
6
7
6
7
6
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
80
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE vs. RF FREQUENCY
P RF = -5dBm
80
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE vs. RF FREQUENCY
P RF = -5dBm
80
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE vs. RF FREQUENCY
P RF = -5dBm
70
T C = +85°C
70
P LO = +3dBm
P LO = 0dBm
70
60
60
60
T C = -40°C
T C = +25°C
P LO = -3dBm
V CC = 4.75V, 5.0V, 5.25V
P LO = -6dBm
50
50
50
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
P RF = -5dBm
95
P RF = -5dBm
95
P RF = -5dBm
85
T C = +85°C
T C = +25°C
85
P LO = -6dBm
85
V CC = 4.75V
75
75
75
65
65
P LO = -3dBm, 0dBm, +3dBm
65
V CC = 5.0V
V CC = 5.25V
T C = -40°C
55
55
55
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
8
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)